CSC2786LF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSC2786LF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 400 MHz

Capacitancia de salida (Cc): 1.3 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO-92

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CSC2786LF datasheet

 7.1. Size:274K  cdil
 csc2786 mf lf kf.pdf pdf_icon

CSC2786LF

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2786 TO-92 Plastic Package B C E For use in FM RF Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage 4 V IB Base Current 20

 9.1. Size:375K  cdil
 csc2713.pdf pdf_icon

CSC2786LF

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2713 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER Formed SMD Package 3 = COLLECTOR 3 1 2 MARKING CSC2713 =13 CSC2713G =13G CSC2713L =13L Complementary CSA1163 Audio Frequency General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATING

 9.2. Size:39K  cdil
 csc2712.pdf pdf_icon

CSC2786LF

IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE OUTLINE DETAILS CSC2712Y=1E ALL DIMENSIONS IN mm CSC2712GR(G)=1F CSC2712BL(L)=1G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLE

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