BUX84A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUX84A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de BUX84A
BUX84A datasheet
bux84a.pdf
isc Silicon NPN Power Transistor BUX84A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) High Speed Switching High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators,converters,inverters,motor con
bux84s 1.pdf
Philips Semiconductors Product specification NPN high voltage BUX84S Power transistor FEATURES SYMBOL QUICK REFERENCE DATA Fast switching VCESM = 800 V c Excellent thermal stability High thermal cycling performance VCEO = 400 V Low thermal resistance b Surface mounting package IC = 2 A VCE(SAT) 1 V (IC = 1 A) e tf = 0.4 s (typ) GENERAL DESCRIPTION PINN
bux84f 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BUX84F; BUX85F Silicon diffused power transistors 1997 Aug 14 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F DESCRIPTION PINNING High-voltage, high-speed, PIN DESCRIPTION glass-passivated NPN power 2 1
bux84 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BUX84; BUX85 Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 DESCRIPTION PINNING High-voltage, high-speed, PIN DESCRIPTION glass-passivated NPN power 1 base t
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History: 2N410
History: 2N410
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