2N6212 Todos los transistores

 ..1. Size:187K  inchange semiconductor
 2n6212.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6212 DESCRIPTION With TO-3 packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignition Alternator regulator Motor controls ABSOLUTE MA

 9.1. Size:142K  mospec
 2n6211-13.pdf

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 9.2. Size:98K  jmnic
 2n6216 2n6217.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITI

 9.3. Size:195K  inchange semiconductor
 2n6211.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6211 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = -225V(Min) CEO(SUS) Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switchi

 9.4. Size:116K  inchange semiconductor
 2n6216 2n6217.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETE

 9.5. Size:184K  inchange semiconductor
 2n6217.pdf

isc Silicon NPN Power Transistor 2N6217 DESCRIPTION With TO-3 package Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear power and switching amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 9.6. Size:184K  inchange semiconductor
 2n6216.pdf

isc Silicon NPN Power Transistor 2N6216 DESCRIPTION With TO-3 package Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear power and switching amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 9.7. Size:189K  inchange semiconductor
 2n6213.pdf

isc Silicon PNP Power Transistor 2N6213 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switching regulators, converte