CSC2713L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSC2713L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 350
Encapsulados: SOT-23
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CSC2713L datasheet
csc2713.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2713 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER Formed SMD Package 3 = COLLECTOR 3 1 2 MARKING CSC2713 =13 CSC2713G =13G CSC2713L =13L Complementary CSA1163 Audio Frequency General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATING
csc2712.pdf
IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE OUTLINE DETAILS CSC2712Y=1E ALL DIMENSIONS IN mm CSC2712GR(G)=1F CSC2712BL(L)=1G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLE
csc2786 mf lf kf.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2786 TO-92 Plastic Package B C E For use in FM RF Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage 4 V IB Base Current 20
Otros transistores... CSC1943F, CSC2482, CSC2611, CSC2712BL, CSC2712GR, CSC2712Y, CSC2713, CSC2713G, 2SC2240, CSC3280F, CSC3280OF, CSC3280RF, CSD1133, CSD1133B, CSD1133C, CSD1133D, CSD1134
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