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TT2140LS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TT2140LS
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-220FI
     - Selección de transistores por parámetros

 

TT2140LS Datasheet (PDF)

 ..1. Size:39K  sanyo
 tt2140ls.pdf pdf_icon

TT2140LS

Ordering number : ENN7215ATT2140LSNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal DeflectionTT2140LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Co

 8.1. Size:226K  inchange semiconductor
 tt2140.pdf pdf_icon

TT2140LS

isc Silicon NPN Power Transistor TT2140DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 3.15ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE

 9.1. Size:30K  sanyo
 tt2142.pdf pdf_icon

TT2140LS

Ordering number : ENN7550TT2142NPN Triple Diffused Planar Silicon TransistorTT2142Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[TT2142] Adoption of MBIT process.5.63.4 On-chip damper diode. 16.03.12.82.0 2.1

 9.2. Size:34K  sanyo
 tt2148.pdf pdf_icon

TT2140LS

Ordering number : ENN0000TT2148NPN Triple Diffused Planar Silicon TransistorTT2148Switching Regulator ApplicationsPreliminaryFeaturesPackage Dimensions High breakdown voltage and high reliability.unit : mm Fast switching speed.2022A Wide ASO.[TT2148] Adoption of MBIT process.15.63.24.814.02.01.62.00.61.01 2 31 : Base0.62 : Collec

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC807K-16 | 2SA922-2 | 2SC2923 | 3CG953 | 2N1683 | PZTA28

 

 
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