CSD1306F Todos los transistores

 7.1. Size:135K  cdil
 csd1306.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD1306 (SAW) PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER Formed SMD Package 3 = COLLECTOR 3 1 2 Marking CSD1306E=06 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 30 V VCEO Collector Emitter Voltage 15

 8.1. Size:115K  cdil
 csd13002.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSD13002 HIGH VOLTAGE SWITCHING TRANSISTOR TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T" B C E Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATING (Ta=25 C ) DES

 9.1. Size:1297K  texas
 csd13383f4.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13383F4 SLPS517 DECEMBER 2014 CSD13383F4 12 V N-Channel FemtoFET MOSFET 1 Features Product Summary 1 Low On-Resistance TA = 25 C TYPICAL VALUE UNIT Ultra Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size) Qg Gate Charge Total (4.5 V) 2.0 n

 9.2. Size:1252K  texas
 csd13202q2.pdf

CSD13202Q2 www.ti.com SLPS313 SEPTEMBER 2013 12V N-Channel NexFET Power MOSFETs Check for Samples CSD13202Q2 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 12 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 5.1 nC Avalanche Rated Qgd Gate Charge Gate to Drain 0.76 nC VGS = 2.5V 9.1 m Pb Free Terminal Plating RDS(on) D

 9.3. Size:1122K  texas
 csd13381f4.pdf

 9.4. Size:1285K  texas
 csd13306w.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13306W SLPS537 MARCH 2015 CSD13306W 12 V N Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low on Resistance TA = 25 C TYPICAL VALUE UNIT Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Small Footprint 1 1.5 mm Qg Gate Charge Total (4.5 V) 8.6 nC Low

 9.5. Size:1103K  texas
 csd13302w.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13302W SLPS535 MARCH 2015 CSD13302W 12 V N Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low On Resistance TA = 25 C TYPICAL VALUE UNIT Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Small Footprint 1 mm 1 mm Qg Gate Charge Total (4.5 V) 6.0 nC Low

 9.6. Size:1497K  texas
 csd13303w1015.pdf

CSD13303W1015 www.ti.com SLPS298A MAY 2012 REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples CSD13303W1015 1 FEATURES PRODUCT SUMMARY Ultra Low on Resistance TA = 25 C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and Qgd VDS Drain to Source Voltage 12 V Small Footprint Qg Gate Charge Total (4.5V) 3.9 nC Qgd Gate Charge Gate to Drain

 9.7. Size:1264K  texas
 csd13201w10.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13201W10 SLPS306A MAY 2012 REVISED SEPTEMBER 2015 CSD13201W10 N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Small Footprint (1 mm 1 mm) VDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm Height Qg Gate Ch