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CSD1306F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD1306F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 600
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar CSD1306F

 

CSD1306F Datasheet (PDF)

 7.1. Size:135K  cdil
csd1306.pdf

CSD1306F CSD1306F

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD1306 (SAW)PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTERFormed SMD Package3 = COLLECTOR312MarkingCSD1306E=06ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO 30 VVCEOCollector Emitter Voltage 15

 8.1. Size:115K  cdil
csd13002.pdf

CSD1306F CSD1306F

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSD13002 HIGH VOLTAGE SWITCHING TRANSISTORTO-92Plastic PackageFor Lead Free Parts, Devices Part # will be Perfixed with "T"BCEApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATING (Ta=25C )DES

 9.1. Size:1297K  texas
csd13383f4.pdf

CSD1306F CSD1306F

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13383F4SLPS517 DECEMBER 2014CSD13383F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size)Qg Gate Charge Total (4.5 V) 2.0 n

 9.2. Size:1252K  texas
csd13202q2.pdf

CSD1306F CSD1306F

CSD13202Q2www.ti.com SLPS313 SEPTEMBER 201312V N-Channel NexFET Power MOSFETsCheck for Samples: CSD13202Q21FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 12 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 5.1 nC Avalanche RatedQgd Gate Charge Gate to Drain 0.76 nCVGS = 2.5V 9.1 m Pb Free Terminal PlatingRDS(on) D

 9.3. Size:1122K  texas
csd13381f4.pdf

CSD1306F CSD1306F

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13381F4SLPS448D JULY 2013 REVISED MAY 2015CSD13381F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Low Threshold VoltageQg Gate Charge Total (4.5 V) 1060 pC

 9.4. Size:1285K  texas
csd13306w.pdf

CSD1306F CSD1306F

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13306WSLPS537 MARCH 2015CSD13306W 12 V N Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low on ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Small Footprint 1 1.5 mmQg Gate Charge Total (4.5 V) 8.6 nC Low

 9.5. Size:1103K  texas
csd13302w.pdf

CSD1306F CSD1306F

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13302WSLPS535 MARCH 2015CSD13302W 12 V N Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low On ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Small Footprint 1 mm 1 mmQg Gate Charge Total (4.5 V) 6.0 nC Low

 9.6. Size:1497K  texas
csd13303w1015.pdf

CSD1306F CSD1306F

CSD13303W1015www.ti.com SLPS298A MAY 2012 REVISED MAY 2012N-Channel NexFET Power MOSFETCheck for Samples: CSD13303W10151FEATURESPRODUCT SUMMARY Ultra Low on ResistanceTA = 25C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain to Source Voltage 12 V Small FootprintQg Gate Charge Total (4.5V) 3.9 nCQgd Gate Charge Gate to Drain

 9.7. Size:1264K  texas
csd13201w10.pdf

CSD1306F CSD1306F

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13201W10SLPS306A MAY 2012 REVISED SEPTEMBER 2015CSD13201W10 N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Small Footprint (1 mm 1 mm)VDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm HeightQg Gate Ch

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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