CSD1563AP Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD1563AP

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-emisor (Vce): 160 V

Corriente del colector DC máxima (Ic): 1.5 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Ganancia de corriente contínua (hFE): 82

Encapsulados: TO-126

 Búsqueda de reemplazo de CSD1563AP

- Selecciónⓘ de transistores por parámetros

 

CSD1563AP datasheet

 9.1. Size:1396K  texas
 csd15571q2.pdf pdf_icon

CSD1563AP

CSD15571Q2 www.ti.com SLPS435 AUGUST 2013 20-V N-Channel NexFET Power MOSFETs Check for Samples CSD15571Q2 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 20 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 2.5 nC Avalanche Rated Qgd Gate Charge Gate to Drain 0.66 nC VGS = 4.5V 16 m Pb Free Terminal Plating RDS(on) Drai

 9.2. Size:1412K  texas
 csd15380f3.pdf pdf_icon

CSD1563AP

 9.3. Size:227K  cdil
 csd1506.pdf pdf_icon

CSD1563AP

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CSD1506 TO126 Plastic Package E C B Complementary CSB1065 Low Frequency Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >60 V Collector Emitter Voltage (open b

Otros transistores... CSD1426F, CSD1506, CSD1506N, CSD1506P, CSD1506Q, CSD1506R, CSD1563, CSD1563AN, BD335, CSD1563AQ, CSD1563N, CSD1563P, CSD1563Q, CSD1563R, CSD1616, CSD1616G, CSD1616L