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CSD1563AQ . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD1563AQ
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-emisor (Vce): 160 V
   Corriente del colector DC máxima (Ic): 1.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO-126

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CSD1563AQ Datasheet (PDF)

 9.1. Size:1396K  texas
csd15571q2.pdf

CSD1563AQ CSD1563AQ

CSD15571Q2www.ti.com SLPS435 AUGUST 201320-V N-Channel NexFET Power MOSFETsCheck for Samples: CSD15571Q21FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 20 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 2.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 0.66 nCVGS = 4.5V 16 m Pb Free Terminal PlatingRDS(on) Drai

 9.2. Size:1412K  texas
csd15380f3.pdf

CSD1563AQ CSD1563AQ

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD15380F3ZHCSEZ4A MAY 2016REVISED JULY 2017CSD15380F3 20V N FemtoFETMOSFET1 1 CiSS COSSTA = 25C Qg QgdVDS 20 V Qg

 9.3. Size:227K  cdil
csd1506.pdf

CSD1563AQ CSD1563AQ

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCSD1506TO126 Plastic PackageECBComplementary CSB1065Low Frequency Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >60 VCollector Emitter Voltage (open b

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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