CSD1563Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD1563Q
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-emisor (Vce): 120 V
Corriente del colector DC máxima (Ic): 1.5 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO-126
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CSD1563Q Datasheet (PDF)
csd15571q2.pdf

CSD15571Q2www.ti.com SLPS435 AUGUST 201320-V N-Channel NexFET Power MOSFETsCheck for Samples: CSD15571Q21FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 20 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 2.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 0.66 nCVGS = 4.5V 16 m Pb Free Terminal PlatingRDS(on) Drai
csd15380f3.pdf

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD15380F3ZHCSEZ4A MAY 2016REVISED JULY 2017CSD15380F3 20V N FemtoFETMOSFET1 1 CiSS COSSTA = 25C Qg QgdVDS 20 V Qg
csd1506.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCSD1506TO126 Plastic PackageECBComplementary CSB1065Low Frequency Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >60 VCollector Emitter Voltage (open b
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: BF167 | STC403Q | KRC663U | 2SB443A | KT3102DM | 2SC765 | NKT108
History: BF167 | STC403Q | KRC663U | 2SB443A | KT3102DM | 2SC765 | NKT108



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