CSD1638 Todos los transistores

 ..1. Size:65K  cdil
 csd1638.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD1638 (9AW) TO126 MARKING CDIL D1638 Low Freq. Power Amp. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 100 V Collector -Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 6.0 V Collector

 8.1. Size:802K  texas
 csd16325q5.pdf

CSD16325Q5 www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16325Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3.5 nC Avalanche Rated VGS = 3V 2.1

 8.2. Size:1195K  texas
 csd16327q3.pdf

CSD16327Q3 www.ti.com SLPS371 DECEMBER 2011 N-Channel NexFET Power MOSFET Check for Samples CSD16327Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5 m Avalanche Rated RDS(on) Drain to

 8.3. Size:801K  texas
 csd16340q3.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD16340Q3 SLPS247E DECEMBER 2009 REVISED AUGUST 2014 CSD16340Q3 25-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Optimized for 5 V Gate Drive TA = 25 C VALUE UNIT Resistance Rated at VGS =2.5 V VDS Drain-to-Source Voltage 25 V Ultra-Low Qg and Qgd Qg Gate Ch

 8.4. Size:757K  texas
 csd16321q5.pdf

 8.5. Size:763K  texas
 csd16322q5.pdf

 8.6. Size:754K  texas
 csd16323q3.pdf

CSD16323Q3 www.ti.com SLPS224B AUGUST 2009 REVISED NOVEMBER 2011 N-Channel NexFET Power MOSFETs Check for Samples CSD16323Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5.4 m Avalanch

 8.7. Size:2743K  texas
 csd16342q5a.pdf

CSD16342Q5A www.ti.com SLPS369A FEBRUARY 2012 REVISED MARCH 2012 N-Channel NexFET Power MOSFETs Check for Samples CSD16342Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Resistance Rated at VGS = 2.5V Qg Gate Charge Total (4.5V) 6.8 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 1.2 nC VGS = 2.5V 6.1 m

 8.8. Size:172K  texas
 csd16301q2.pdf

CSD16301Q2 www.ti.com SLPS235C OCTOBER 2009 REVISED JULY 2011 N-Channel NexFET Power MOSFETs Check for Samples CSD16301Q2 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total ( 4.5V) 2 nC Pb Free Terminal Plating Qgd Gate Charge Gate to Drain 0.4 nC RoHS Compliant VGS = 3V 27 m

 8.9. Size:2570K  cn vbsemi
 csd16323q3.pdf

CSD16323Q3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control I