CSD1638 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD1638(9AW)TO126 MARKING : CDIL D1638Low Freq. Power Amp.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 100 VCollector -Emitter Voltage VCEO 100 VEmitter Base Voltage VEBO 6.0 VCollector

CSD16325Q5www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16325Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 18 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 3.5 nC Avalanche RatedVGS = 3V 2.1

CSD16327Q3www.ti.com SLPS371 DECEMBER 2011N-Channel NexFET Power MOSFETCheck for Samples: CSD16327Q31FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 6.2 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nCVGS = 3V 5 m Avalanche RatedRDS(on) Drain to

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD16340Q3SLPS247E DECEMBER 2009 REVISED AUGUST 2014CSD16340Q3 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Optimized for 5 V Gate DriveTA = 25C VALUE UNIT Resistance Rated at VGS =2.5 VVDS Drain-to-Source Voltage 25 V Ultra-Low Qg and QgdQg Gate Ch

CSD16321Q5www.ti.com SLPS220B AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16321Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 14 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.5 nC Avalanche RatedVGS = 3V 2.8 m

CSD16322Q5www.ti.com SLPS219B AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16322Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 6.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.3 nC Avalanche RatedVGS = 3V 5.4 m

CSD16323Q3www.ti.com SLPS224B AUGUST 2009REVISED NOVEMBER 2011N-Channel NexFET Power MOSFETsCheck for Samples: CSD16323Q31FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 6.2 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nCVGS = 3V 5.4 m Avalanch

CSD16342Q5Awww.ti.com SLPS369A FEBRUARY 2012 REVISED MARCH 2012N-Channel NexFET Power MOSFETsCheck for Samples: CSD16342Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Resistance Rated at VGS = 2.5VQg Gate Charge Total (4.5V) 6.8 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 1.2 nCVGS = 2.5V 6.1 m

CSD16301Q2www.ti.com SLPS235C OCTOBER 2009REVISED JULY 2011N-Channel NexFET Power MOSFETsCheck for Samples: CSD16301Q21FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 2 nC Pb Free Terminal PlatingQgd Gate Charge Gate to Drain 0.4 nC RoHS CompliantVGS = 3V 27 m

CSD16323Q3www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control I