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CSD1638 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD1638
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.2 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO-126

 Búsqueda de reemplazo de transistor bipolar CSD1638

 

CSD1638 Datasheet (PDF)

 ..1. Size:65K  cdil
csd1638.pdf

CSD1638
CSD1638

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD1638(9AW)TO126 MARKING : CDIL D1638Low Freq. Power Amp.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 100 VCollector -Emitter Voltage VCEO 100 VEmitter Base Voltage VEBO 6.0 VCollector

 8.1. Size:802K  texas
csd16325q5.pdf

CSD1638
CSD1638

CSD16325Q5www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16325Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 18 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 3.5 nC Avalanche RatedVGS = 3V 2.1

 8.2. Size:1195K  texas
csd16327q3.pdf

CSD1638
CSD1638

CSD16327Q3www.ti.com SLPS371 DECEMBER 2011N-Channel NexFET Power MOSFETCheck for Samples: CSD16327Q31FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 6.2 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nCVGS = 3V 5 m Avalanche RatedRDS(on) Drain to

 8.3. Size:801K  texas
csd16340q3.pdf

CSD1638
CSD1638

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD16340Q3SLPS247E DECEMBER 2009 REVISED AUGUST 2014CSD16340Q3 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Optimized for 5 V Gate DriveTA = 25C VALUE UNIT Resistance Rated at VGS =2.5 VVDS Drain-to-Source Voltage 25 V Ultra-Low Qg and QgdQg Gate Ch

 8.4. Size:757K  texas
csd16321q5.pdf

CSD1638
CSD1638

CSD16321Q5www.ti.com SLPS220B AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16321Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 14 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.5 nC Avalanche RatedVGS = 3V 2.8 m

 8.5. Size:763K  texas
csd16322q5.pdf

CSD1638
CSD1638

CSD16322Q5www.ti.com SLPS219B AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16322Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 6.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.3 nC Avalanche RatedVGS = 3V 5.4 m

 8.6. Size:754K  texas
csd16323q3.pdf

CSD1638
CSD1638

CSD16323Q3www.ti.com SLPS224B AUGUST 2009REVISED NOVEMBER 2011N-Channel NexFET Power MOSFETsCheck for Samples: CSD16323Q31FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 6.2 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nCVGS = 3V 5.4 m Avalanch

 8.7. Size:2743K  texas
csd16342q5a.pdf

CSD1638
CSD1638

CSD16342Q5Awww.ti.com SLPS369A FEBRUARY 2012 REVISED MARCH 2012N-Channel NexFET Power MOSFETsCheck for Samples: CSD16342Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Resistance Rated at VGS = 2.5VQg Gate Charge Total (4.5V) 6.8 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 1.2 nCVGS = 2.5V 6.1 m

 8.8. Size:172K  texas
csd16301q2.pdf

CSD1638
CSD1638

CSD16301Q2www.ti.com SLPS235C OCTOBER 2009REVISED JULY 2011N-Channel NexFET Power MOSFETsCheck for Samples: CSD16301Q21FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 2 nC Pb Free Terminal PlatingQgd Gate Charge Gate to Drain 0.4 nC RoHS CompliantVGS = 3V 27 m

 8.9. Size:2570K  cn vbsemi
csd16323q3.pdf

CSD1638
CSD1638

CSD16323Q3www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control I

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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