2SC5803 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5803DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage color display horizontaldeflection output applications.

Ordering number : ENN70792SC5808NPN Triple Diffused Planar Silicon Transistor2SC5808Switching Power Supply ApplicationsFeaturesPackage Dimensions High breakdown voltage.unit : mm High speed switching.2045B Wide ASO.[2SC5808] Adoption of MBIT process.6.52.35.00.540.850.71.20.60.51 : Base2 : Collector1 2 33 : Emitter4 : Collector

DATA SHEETNPN SILICON RF TRANSISTOR2SC5801NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES Low phase distortion, low voltage operation Ideal for OSC applications 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5801 50 pcs (Non reel) 8 mm wide embossed taping2SC5801-T3 10 kpcs/re

DATA SHEETNPN SILICON RF TRANSISTOR2SC5800NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low phase distortion, low voltage operation Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5800 50 pcs (Non reel) 8 mm

Power Transistors2SC5809Silicon NPN triple diffusion planar typeUnit: mm4.60.2For high breakdown voltage high-speed switching9.90.32.90.2 3.20.1 Features High-speed switching (Fall time tf is short) High collector-base voltage (Emitter open) VCBO Low collector-emitter saturation voltage VCE(sat) TO-220D built-in: Excellent package with withstan

SMALL-SIGNAL TRANSISTOR 2SC5804 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC5804 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency application. 0.8 0.2 0.2Since it is a super-thin flat lead type package,a high-density mounting are possible.

TransistorDEVELOPING 2SC5807For Low Frequency Amplify ApplicationSilicon NPN Epitaxial TypeDESCRIPTIONOUTLINE DRAWING Unit 2SC5807 is a silicon NPN epitaxial Transistor.4.6 MAXIt designed with high collector current and high collector dissipation.1.51.6FEATUREHigh collector current IC=5ASmall collector to Emitter saturation voltageCE B

JMnic Product SpecificationSilicon NPN Power Transistors 2SC5802 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Wide area of safe operation APPLICATIONS For high voltage color display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum rati

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5802DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage color display horizontaldeflection output applications.