2SC5586 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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isc Silicon NPN Power Transistor 2SC5586DESCRIPTIONHigh Collector-Base Voltage-: V = 900V(Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBO

2SC5588 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5588 Unit: mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTER

2SC5589 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5589 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit: mm HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCo

2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT

2SC5663 / 2SC5585 DatasheetLow frequency transistor (12V, 500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO12VIC500mA 2SC5663 2SC5585(VMT3) (EMT3)lFeatures l 1)High current2)Low VCE(sat).VCE(sat)250mV at IC=200mA/IB=10mAlApplicationlLOW FREQUENCY

2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit : mm) Applications For switching 2SC5585For muting (1)(2)(3)0.8 Features 1.61) High current. 2) Low VCE(sat). 0.1Min.(1) Emitter

Power Transistors2SC5583Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output20.00.5 5.00.3(3.0) 3.30.2 Features High breakdown voltage, and high reliability through the use of aglass passivation layer(1.5) High-speed switching Wide area of safe operation (ASO) (1.5)2.00.32.70.33.00.31.00.2 Absolute Maximum Ra

Transistors2SC5580Silicon NPN epitaxial planer typeUnit: mmFor high-frequency oscillation / switching0.3+0.1 0.15+0.100.050.03 Features High transition frequency fT S-mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazine(0.65) (0.65)packing.1.30.12.00.210 Absolute Maximu

Power Transistors2SC5584Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output20.00.5 5.00.3(3.0) 3.30.2 Features High breakdown voltage, and high reliability through the use of aglass passivation layer(1.5) High-speed switching Wide area of safe operation (ASO) (1.5)2.00.32.70.33.00.31.00.2 Absolute Maximum Ra

2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Current. Low VCE(sat). VCE(sat)0.25V (@IC=200mA / IB=10mA) A Complement of 2SC4738. M33Top View C BApplication 11 2 General Purpose Amplification. L 2KEMARKING DH

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate TransistorsSOT-523 32SC5585 TRANSISTOR (NPN) FEATURES High current. Low VCE(sat). VCE(sat)250mV at IC = 200mA / IB = 10mA11. BASE 22. EMITTERMARKING: BX 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector- Base Voltage 15 V VCEO C

2SC5585SOT-523 Transistor(NPN)1. BASE SOT-5232. EMITTER 3. COLLECTOR Features High current. Low VCE(sat). VCE(sat)250mV at IC = 200mA / IB = 10mA MARKING: BX Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-B

2SC5585NPN TRANSISTOR3P b Lead(Pb)-Free12FEATURES:SOT-523(SC-75)* High current.* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mAMAXIMUM RATINGS (TA=25Cunless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO 15 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 6 VCollector Current Continuous IC 500 mACollector Dissipa

isc Product Specificationisc Silicon NPN Power Transistor 2SC5584DESCRIPTIONSilicon NPN triple diffusion mesa typeHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)