2SC5586 Todos los transistores

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isc Silicon NPN Power Transistor 2SC5586 DESCRIPTION High Collector-Base Voltage- V = 900V(Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO

2SC5588 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5588 Unit mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTER

2SC5589 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5589 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit mm HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Co

2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT

2SC5663 / 2SC5585 Datasheet Low frequency transistor (12V, 500mA) lOutline l Parameter Value SOT-723 SOT-416 VCEO 12V IC 500mA 2SC5663 2SC5585 (VMT3) (EMT3) lFeatures l 1)High current 2)Low VCE(sat). VCE(sat) 250mV at IC=200mA/IB=10mA lApplication l LOW FREQUENCY

2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit mm) Applications For switching 2SC5585 For muting (1) (2) (3) 0.8 Features 1.6 1) High current. 2) Low VCE(sat). 0.1Min. (1) Emitter

Power Transistors 2SC5583 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 20.0 0.5 5.0 0.3 (3.0) 3.3 0.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 Absolute Maximum Ra

Transistors 2SC5580 Silicon NPN epitaxial planer type Unit mm For high-frequency oscillation / switching 0.3+0.1 0.15+0.10 0.05 0.0 3 Features High transition frequency fT S-mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.65) (0.65) packing. 1.3 0.1 2.0 0.2 10 Absolute Maximu

Power Transistors 2SC5584 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 20.0 0.5 5.0 0.3 (3.0) 3.3 0.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 Absolute Maximum Ra

2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Current. Low VCE(sat). VCE(sat) 0.25V (@IC=200mA / IB=10mA) A Complement of 2SC4738. M 3 3 Top View C B Application 1 1 2 General Purpose Amplification. L 2 K E MARKING D H

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 3 2SC5585 TRANSISTOR (NPN) FEATURES High current. Low VCE(sat). VCE(sat) 250mV at IC = 200mA / IB = 10mA 1 1. BASE 2 2. EMITTER MARKING BX 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage 15 V VCEO C

2SC5585 SOT-523 Transistor(NPN) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features High current. Low VCE(sat). VCE(sat) 250mV at IC = 200mA / IB = 10mA MARKING BX Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-B

2SC5585 NPN TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES SOT-523(SC-75) * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA MAXIMUM RATINGS (TA=25 Cunless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 6 V Collector Current Continuous IC 500 mA Collector Dissipa

isc Product Specification isc Silicon NPN Power Transistor 2SC5584 DESCRIPTION Silicon NPN triple diffusion mesa type High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )