2N623
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N623
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.04
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 15
V
Tensión emisor-base (Veb): 1
V
Corriente del colector DC máxima (Ic): 0.06
A
Temperatura operativa máxima (Tj): 100
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90
MHz
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta:
TO9
Búsqueda de reemplazo de transistor bipolar 2N623
2N623
Datasheet (PDF)
0.1. Size:96K motorola
2n6237 2n6238 2n6239 2n6240 2n6241.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6237/D2N6237thruSilicon Controlled Rectifiers2N6241Reverse Blocking Triode Thyristors. . . PNPN devices designed for high volume consumer applications such asSCRstemperature, light, and speed control; process and remote control, and warning4 AMPERES RMSsystems where reliability of operation is important.50 t
0.2. Size:11K semelab
2n6230.pdf
2N6230Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.3. Size:10K semelab
2n6235x.pdf
2N6235XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec
0.4. Size:11K semelab
2n6235.pdf
2N6235Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 325V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
0.5. Size:11K semelab
2n6234.pdf
2N6234Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
0.6. Size:110K jmnic
2n6229 2n6230 2n6231.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol
0.7. Size:139K microsemi
2n6232.pdf
TECHNICAL DATASILICON NPN TRANSISTOR Devices 10 AMP 2N6232 100 V FAST SWITCHING LOW SATURATION VOLTAGE MAXIMUM RATINGS Ratings Symbol Value UnitsCollector-Emitter Voltage 100 VdcVCEO Collector-Base Voltage 140 VdcVCBO Emitter-Base Voltage 7.0 VdcVEBO Collector Current Peak (1) 10 AdcIC Base Current Continuous IB AdcTotal Power Dissipation @
0.8. Size:187K inchange semiconductor
2n6235.pdf
isc Silicon NPN Power Transistor 2N6235DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 325V(Min)CEO(SUS)DC Current Gain-: h = 25-125@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V )= 0.5V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f for high-voltage medium pow
0.9. Size:117K inchange semiconductor
2n6229 2n6230 2n6231.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3
Otros transistores... 2N6222
, 2N6223
, 2N6224
, 2N6225
, 2N6226
, 2N6227
, 2N6228
, 2N6229
, C945
, 2N6230
, 2N6231
, 2N6232
, 2N6232-4
, 2N6233
, 2N6234
, 2N6235
, 2N6235R
.
