2SC4680 Todos los transistores

 ..1. Size:35K  hitachi
 2sc4680.pdf

2SC4680 Silicon NPN Epitaxial Application VHF / UHF high frequency switching Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4680 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8V Emitter t

 ..2. Size:586K  kexin
 2sc4680.pdf

SMD Type Transistors NPN Transistors 2SC4680 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

 8.1. Size:207K  toshiba
 2sc4686a.pdf

 8.2. Size:176K  toshiba
 2sc4689.pdf

 8.3. Size:177K  toshiba
 2sc4682.pdf

 8.4. Size:179K  toshiba
 2sc4683.pdf

 8.5. Size:223K  toshiba
 2sc4686.pdf

 8.6. Size:195K  toshiba
 2sc4684.pdf

2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C h = 250 (V = 2 V, I = 4 A) FE (2) CE C Low collector saturation voltage V = 0.5 V (max) (I = 4 A, I = 40 mA) CE (sat) C B High power dissipation P

 8.7. Size:177K  toshiba
 2sc4688.pdf

 8.8. Size:68K  toshiba
 2sc4681.pdf

2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 200 to 600 (V = 2 V, I = 0.5 A) FE (1) CE C h = 140 (min), 200 (typ.) (V = 2 V, I = 3 A) FE (2) CE C Low collector saturation voltage V = 0.5 V (max) (I = 3 A, I = 60 mA) CE (sat) C B Compleme

 8.9. Size:135K  toshiba
 2sc4686 2sc4686a.pdf

2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications Unit mm High-Voltage Switching Applications High-Voltage Amplifier Applications High voltage VCEO = 1200 V (max) Small collector output capacitance Cob = 2.2 pF (typ.) (VCB = 100 V) Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating U

 8.10. Size:185K  toshiba
 2sc4685.pdf

 8.11. Size:110K  jmnic
 2sc4689.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4689 DESCRIPTION With TO-3PFM package Complementary to 2SA1804 Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=

 8.12. Size:150K  jmnic
 2sc4687.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4687 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute ma

 8.13. Size:123K  jmnic
 2sc4688.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4688 DESCRIPTION With TO-3PFM package Complement to type 2SA1803 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Maximum absolu

 8.14. Size:197K  inchange semiconductor
 2sc4689.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4689 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 6A CE(sat) C Complement to Type 2SA1804 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier a

 8.15. Size:187K  inchange semiconductor
 2sc4687.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4687 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A

 8.16. Size:195K  inchange semiconductor
 2sc4688.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Complement to Type 2SA1803 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier ap