2SC4715 Datasheet. Equivalente

 ..1. Size:37K  panasonic
 2sc4715 e.pdf

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage

 ..2. Size:34K  panasonic
 2sc4715.pdf

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage

 8.1. Size:101K  sanyo
 2sc4710.pdf

Ordering number EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit mm Small Cob (typical Cob=1.3pF). 2079B Wide ASO. [2SC4710] High reliability (Adoption of HVP process). 4.5 10.0 2.8 Full isolation packag

 8.2. Size:29K  sanyo
 2sc4710ls.pdf

 8.3. Size:76K  rohm
 2sc4774 2sc4713k.pdf

2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC4774 1) Very low output-on resistance (Ron). 2) Low capacitance. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 6 V 0.1Min. Emitter-base voltage VEBO 3 V E

 8.4. Size:306K  panasonic
 2sc4714.pdf

2SC4714 NPN Unit mm 10.5 0.5 4.5 0.2 9.5 0.2 1.4 0.1 8.0 0.2 VCEO Cob 3.7 0.1 (TC=25 C) 1.4 0.1 2.5 0.2 0.8