2SC4727 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4727
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: FLP
Búsqueda de reemplazo de transistor bipolar 2SC4727
2SC4727 Datasheet (PDF)
2sc4727.pdf
Ordering number:EN3871NPN Epitaxial Planar Silicon Transistor2SC472720V/8A Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm Low saturation voltage.2084B Fast switching speed.[2SC4727] Large current capacity.4.51.9 2.610.5 It is possible to make appliances more compact1.2 1.4because its height on board is 9.5mm.
2sc4728.pdf
Ordering number:EN3872PNP/NPN Epitaxial Planar Silicon Transistors2SA1824/2SC472850V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2084[2SA1824/2SC4728]Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exce
2sc4729.pdf
Ordering number:EN3877PNP/NPN Epitaxial Planar Silicon Transistors2SA1825/2SC472950V/8A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2084[2SA1825/2SC4729]Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exce
2sc4725 2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage
2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage
2sc4726 2sc5662 2sc4726 2sc4083 2sc3838k.pdf
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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