2SC4787 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4787
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 35 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: MT1
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2SC4787 datasheet
2sc4787.pdf
Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C)
2sc4787 e.pdf
Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C)
2sc4783.pdf
DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC4783 is NPN silicon epitaxial transistor. 0.3 0.05 0.1+0.1 0.05 FEATURES High DC current gain hFE2 = 200 TYP. High voltage VCEO = 50 V 3 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 2 1 Collector to Base Voltage VCBO 60 V 0.2+0.1
Otros transistores... 2SC4715, 2SC4727, 2SC4736, 2SC4737, 2SC4755, 2SC4782, 2SC4783, 2SC4784, 2SC2655, 2SC4791, 2SC4805, 2SC4807, 2SC4808, 2SC4809, 2SC4810, 2SC4811, 2SC4813
History: KC857C | 2SC526 | BCW84B | LMUN5115T1G | BFT95B | FV3300 | 2SC4791
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