2SC4841 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 8.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4840 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4842 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

2SC4844 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 15.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5

2SC4849 Transistors Transistors 2SC5147 (94L-712-C342) (96-736-C358) 302

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4847 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4849 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4848 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS