2SC4885 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS (Units mm) FEATURES Excellent Low NF in Low Frequency Band 2.1 0.1 Low Voltage Use 1.25 0.1 Low Cob 0.9 pF TYP. Low Noise Voltage 90 mV TYP. 2 Super Mini Mold Package. EIAJ SC-70 3 1 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Colle

Ordering number EN4136 NPN Epitaxial Planar Silicon Transistor 2SC4884 High-Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display. unit mm Especially suited for use in color TV chrome output 2084B and high breakdown voltage driver applications. [2SC4884] 4.5 1.9 2.6 10.5 1.2 1.4 Features Adoption of MBIT process

2SC4880 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features High speed switching tf 0.5 s High breakdown voltage VCBO = 1700 V Outline TO-3PL 1. Base 2. Collector 3. Emitter 1 2 3 2SC4880 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter vo

LAPT 2SC4886 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SC4886 Symbol Conditions 2SC4886 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 150 ICBO VCB=150V 100max A V VCEO 150 IEBO VEB=5V 100max A V

2SC4883/4883A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) Application Audio Output Driver and TV Velocity-modulation (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM20(TO220F) Symbol 2SC4883 2SC4883A Unit Symbol Conditions 2SC4883 2SC4883A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 150 180 V 10max A I

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4881 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High Switching Speed Low Collector Saturation Voltage- V = 0.4V(Max)@ (I = 2.5A, I = 125mA) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4880 DESCRIPTION High Breakdown Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4883A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SA1859A 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4886 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Complement to Type 2SA1860 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4883 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Complement to Type 2SA1859 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a