2SC5263
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5263
Código: MIR_MIO
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 15
V
Tensión colector-emisor (Vce): 7
V
Tensión emisor-base (Veb): 1.5
V
Corriente del colector DC máxima (Ic): 0.015
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9000
MHz
Capacitancia de salida (Cc): 0.45
pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: 2-2K1A
Búsqueda de reemplazo de transistor bipolar 2SC5263
2SC5263
Datasheet (PDF)
8.7. Size:463K sanyo
2sc5264.pdf 
Ordering number:ENN5287NPN Triple Diffused Planar Silicon Transistor2SC5264Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079C Adoption of MBIT process.[2SC5264]4.510.02.83.20.91.20.70.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55SANYO :
8.8. Size:42K sanyo
2sc5264ls.pdf
Ordering number:ENN5287ANPN Triple Diffused Planar Silicon Transistor2SC5264LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5264]10.0 4.53.22.80.91.2 1.20.75 0.71 : Base1 2 32 : Collector3 : Emitter2.55 2.55Spe
8.9. Size:112K sanyo
2sc5265.pdf
Ordering number:EN5321NPN Triple Diffused Planar Silicon Transistor2SC5265Inverter-controlled Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5265]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55
8.10. Size:31K sanyo
2sc5265ls.pdf
Ordering number : ENN5321A2SC5265LSNPN Triple Diffused Planar Silicon Transistor2SC5265LSInverter-Controlled Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCBO=1200V).unit : mm High reliability(Adoption of HVP process).2079D Adoption of MBIT process.[2SC5265LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Base2 : Collector
8.11. Size:209K inchange semiconductor
2sc5265.pdf
isc Silicon NPN Power Transistor 2SC5265DESCRIPTIONHigh Breakdown Voltage-(Vcb=1200V) High ReliabilityAdoption of MBIT processMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter-controlledLightingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-E
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