2SC5289 Datasheet. Equivalente

 ..1. Size:114K  nec
 2sc5289.pdf

DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones (DECT, PHS, etc.). (Unit mm) 2.8+0.2 FEATURES 0.3 1.5+0.2 0.1 P 1 = 27 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold

 8.1. Size:344K  toshiba
 2sc5280.pdf

2SC5280 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo

 8.2. Size:117K  nec
 2sc5288.pdf

DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones (DECT, PHS, etc.). (Unit mm) 2.8+0.2 FEATURES 0.3 1.5+0.2 0.1 P 1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold

 8.3. Size:24K  no
 2sc5287.pdf

2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose (Ta=25 C) Absolute maximum ratings Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 ICBO VCBO 900 V VCB=800V 100max A IEBO VEB

 8.4. Size:230K  jmnic
 2sc5280.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5280 DESCRIPTION With TO-3P(H)IS package High voltage Low saturation voltage High speed Bult-in damper diode APPLICATIONS High speed switching applications Horizontal deflection output for medium resolution display,color TV PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (

 8.5. Size:182K  jmnic
 2sc5287.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5287 DESCRIPTION With TO-3PN package High voltage,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )

 8.6. Size:24K  sanken-ele
 2sc5287.pdf

2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose (Ta=25 C) Absolute maximum ratings Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 ICBO VCBO 900 V VCB=800V 100max A IEBO VEB

 8.7. Size:219K  inchange semiconductor
 2sc5280.pdf

isc Silicon NPN Power Transistor 2SC5280 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high medium resolution display& color TV. High speed switching applications

 8.8. Size:218K  inchange semiconductor
 2sc5287.pdf

isc Silicon NPN Power Transistor 2SC5287 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 550V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU