2SC5295 Datasheet. Equivalente

 ..1. Size:43K  panasonic
 2sc5295.pdf

Transistors 2SC5295 Silicon NPN epitaxial planer type Unit mm For 2 GHz band low-noise amplification 0.2+0.1 0.15+0.1 0.05 0.05 3 Features High transition frequency fT Low collector output capacitance Cob SS-mini type package, allowing downsizing of the equipment and 1 2 (0.5) (0.5) automatic insertion through the tape packing. 1.0 0.1 1.6 0.1 5 Absolut

 8.1. Size:94K  sanyo
 2sc5299.pdf

Ordering number EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed tf=100ns typ. unit mm High breakdown voltage VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5299] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0

 8.2. Size:100K  sanyo
 2sc5297.pdf

Ordering number ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed tf=100ns typ. unit mm High breakdown voltage VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5297] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0

 8.3. Size:27K  sanyo
 2sc5291.pdf

Ordering number ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2084B Can be provided in taping. [2SC5291] 9.5mm onboard mounting height. 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collecto

 8.4. Size:95K  sanyo
 2sc5298.pdf

Ordering number EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed tf=100ns typ. unit mm High breakdown voltage VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5298] Adoption of MBIT process. 16.0 5.6 3.4 On-chip da

 8.5. Size:99K  sanyo
 2sc5296.pdf

Ordering number ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed tf=100ns typ. unit mm High breakdown voltage VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5296] Adoption of MBIT process. 16.0 5.6 3.4 On-chip

 8.6. Size:37K  panasonic
 2sc5294.pdf

Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (Ta=

 8.7. Size:78K  jmnic
 2sc5299.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5299 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum abso

 8.8. Size:74K  jmnic
 2sc5297.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5297 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum abs

 8.9. Size:205K  jmnic
 2sc5296.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Em

 8.10. Size:176K  cn sptech
 2sc5299.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5299 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-

 8.11. Size:214K  inchange semiconductor
 2sc5299.pdf

isc Silicon NPN Power Transistor 2SC5299 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 8.12. Size:221K  inchange semiconductor
 2sc5297.pdf

isc Silicon NPN Power Transistor 2SC5297 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 8.13. Size:220K  inchange semiconductor
 2sc5296.pdf

isc Silicon NPN Power Transistor 2SC5296 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =