2N6259. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2N6259 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6259

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250 W

Tensión colector-base (Vcb): 170 V

Tensión colector-emisor (Vce): 170 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 16 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.2 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

Búsqueda de reemplazo de 2N6259

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2N6259 datasheet

..1. Size:111K mospec
2n6259.pdf pdf_icon

A A A

..2. Size:83K jmnic
2n6259.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6259 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipation APPLICATIONS Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and DC-DC converters or inverters PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Colle

..3. Size:174K inchange semiconductor
2n6259.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6259 DESCRIPTION DC Current Gain- hFE= 15-60@IC= 8A High Power Dissipation PD= 150W@ IC= 15A APPLICATIONS Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(T

9.1. Size:180K motorola
2n6251re.pdf pdf_icon

Order this document MOTOROLA by 2N6251/D SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR . . . designed for high voltage inverters, switching regulators and line operated NPN SILICON amplifier applications. Especially well suited for switching power supply applications. 350 VOLTS High Voltage Breakdown Rating 175 WATTS

9.2. Size:111K central
2n6249 2n6250 2n6251.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

9.3. Size:382K comset
2n6249-2n6250-2n6251.pdf pdf_icon

2N6249 2N6250 2N6251 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS The 2N6249 2N6250 2N6251 are NPN silicon transistors in Jedec TO-3. They are designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. High Voltage Breakdown

9.4. Size:202K comset
2n6253-2n6254-2n6371.pdf pdf_icon

2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are suppli

9.5. Size:12K semelab
2n6254.pdf pdf_icon

2N6254 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

9.6. Size:11K semelab
2n6253.pdf pdf_icon

2N6253 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 45V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

9.7. Size:99K jmnic
2n6254.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6254 DESCRIPTION With TO-3 package Low saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3)

9.8. Size:83K jmnic
2n6258.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6258 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAME

9.9. Size:122K jmnic
2n6249 2n6250 2n6251.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION With TO-3 package High voltage Low saturation voltage Fast switching capability APPLICATIONS For high voltage inverters ,switching regulators and line operated amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em

9.10. Size:94K jmnic
2n6257.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6257 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Excellent safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maxim

9.11. Size:100K jmnic
2n6253.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6253 DESCRIPTION With TO-3 package Low saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3)

9.12. Size:179K microsemi
2n6250t1.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6250 2N6251 JAN 2N6249T1 2N6250T1 2N6251T1 JANTX JA

9.13. Size:179K microsemi
2n6251t1.pdf pdf_icon

9.14. Size:231K microsemi
2n6255.pdf pdf_icon

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION Silicon NPN transistor, designed for 12.5

9.15. Size:179K microsemi
2n6249t1 2n6249t1 2n6250t1.pdf pdf_icon

9.16. Size:176K aeroflex
2n6249 2n6250 2n6251.pdf pdf_icon

NPN High Power Silicon Transistors 2N6249, 2N6250, 2N6251 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N6249 2N6250 2N6251 Units Collector - Emitter Voltage VCEO 200 275 350 Vdc Collector - Base Voltage VCBO 300 375 450 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Collector Current IC 10 Adc Base Curr

9.17. Size:116K inchange semiconductor
2n6254.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6254 DESCRIPTION With TO-3 package Low collector saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline

9.18. Size:116K inchange semiconductor
2n6258.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6258 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAM

9.19. Size:119K inchange semiconductor
2n6249 2n6250 2n6251.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION With TO-3 package High voltage,high speed Low collector saturation voltage APPLICATIONS High voltage inverters Switching regulators Line operated amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified out

9.20. Size:116K inchange semiconductor
2n6257.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6257 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maxi

9.21. Size:116K inchange semiconductor
2n6253.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6253 DESCRIPTION With TO-3 package Low collector saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline

9.22. Size:176K inchange semiconductor
2n6251.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6251 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) High Power Dissipation APPLICATIONS Designed for high voltage, high current ,high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V

Otros transistores... 2N6250 , 2N6251 , 2N6253 , 2N6254 , 2N6255 , 2N6256 , 2N6257 , 2N6258 , TIP42C , 2N626 , 2N6260 , 2N6261 , 2N6262 , 2N6263 , 2N6264 , 2N6265 , 2N6266 .