2SC5302
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5302
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 4
Paquete / Cubierta:
TO-3PML
Búsqueda de reemplazo de transistor bipolar 2SC5302
2SC5302
Datasheet (PDF)
..1. Size:89K sanyo
2sc5302.pdf 
Ordering number:EN5363BNPN Triple Diffused Planar Silicon Transistor2SC5302Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Fast speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC5302] Adoption of MBIT process.16.05.63.43.12.82.0
..2. Size:211K inchange semiconductor
2sc5302.pdf
isc Silicon NPN Power Transistor 2SC5302DESCRIPTIONHigh Breakdown Voltage:V = 1500V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for inverter lighting applications.Absolute maximum ratings (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 V
8.3. Size:40K sanyo
2sc5303.pdf
Ordering number:ENN6177NPN Triple Diffused Planar Silicon Transistor2SC5303Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5303] Adoption of MBIT process.20.0 5.01.751.02.91.2
8.4. Size:43K sanyo
2sc5304ls.pdf
Ordering number:ENN5883ANPN Triple Diffused Planar Silicon Transistor2SC5304LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5304]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55
8.5. Size:96K sanyo
2sc5301.pdf
Ordering number:EN5417ANPN Triple Diffused Planar Silicon Transistor2SC5301Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5301] Adoption of MBIT process.20.0 5.01.751.02.91
8.6. Size:36K sanyo
2sc5304.pdf
Ordering number:EN5883NPN Triple Diffused Planar Silicon Transistor2SC5304Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5304]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI
8.7. Size:98K sanyo
2sc5300.pdf
Ordering number:EN5416ANPN Triple Diffused Planar Silicon Transistor2SC5300Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC5300] Adoption of MBIT process.16.05.63.43.12.82
8.8. Size:42K sanyo
2sc5305ls.pdf
Ordering number:ENN5884ANPN Triple Diffused Planar Silicon Transistor2SC5305LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5305]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55
8.9. Size:34K sanyo
2sc5305.pdf
Ordering number:EN5884NPN Triple Diffused Planar Silicon Transistor2SC5305Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5305]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI
8.10. Size:156K utc
2sc5305.pdf
UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1* Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1: Base 2: Colle
8.11. Size:877K kexin
2sc5307.pdf
SMD Type TransistorsNPN Transistors2SC5307SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=400V Marking : AL0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emit
8.12. Size:212K inchange semiconductor
2sc5305.pdf
isc Silicon NPN Power Transistor 2SC5305DESCRIPTIONHigh Breakdown Voltage:V = 1200V (Min)(BR)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for inverter lighting applications.Absolute maximum ratings (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collect
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
