2SC5379 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SC5379Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.High transition frequency fT.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packing.Absolute Maximum Ratings (Ta=25C)0.2 0.1Par

Transistor2SC5379Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.High transition frequency fT.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packing.Absolute Maximum Ratings (Ta=25C)0.2 0.1Par

2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit: mmFor Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) 1.20.05 @IC = 10 mA/IB = 0.5 mA 0.80.05 High Collector Current: IC = 400 mA (max) 1 2 3Absolute Maximum Ratings (Ta = 25C)

2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current: I = 400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating

2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5376CT General Purpose Amplifier Applications Unit: mmSwitching and Muting Switch Applications 0.60.050.50.03 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 400 mA (max) Absolute Maximum Ratings (Ta = 25C) 0.35

2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current: I = 400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Un

Ordering number:EN5541ANPN Epitaxial Planar Silicon Transistor2SC5375VHF to UHF Band OSC,High-Frequency Amplifiers ApplicationsFeatures Package Dimensions2 High gain : S21e =10dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2059B[2SC5375]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emitter3 : CollectorSANYO : MCP

Ordering number : ENA1090 2SC5374ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Band OSC,2SC5374AHigh-Frequency Amplifier ApplicationsFeatures High gain : S21e2=10.5dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-B

Ordering number:EN5535ANPN Epitaxial Planar Silicon Transistor2SC5374VHF to UHF Band OSC,High-Frequency Amplifiers ApplicationsFeatures Package Dimensions2 High gain : S21e =10.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2106A[2SC5374]0.750.30.60 to 0.10.20.10.5 0.51.61 : Base2 : Emitter3 : CollectorSANYO : SMCPSpec

Ordering number : ENA1090A2SC5374ARF Transistorhttp://onsemi.com10V, 100mA, fT=5.2GHz, NPN Single SMCPFeatures High gain 2 : S21e =10.5dB typ (f=1GHz) High cut-off frequency : fT=5.2GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 10 VEmit

Transistor2SC5378Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Low noise figure NF.High gain.1High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rating

Transistor2SC5378Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Low noise figure NF.High gain.1High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rating

2SC5370Silicon NPN Epitaxial Planar Transistor Application : Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5370 Symbol Conditions 2SC5370 UnitUnit 0.24.20.210.1c0.52.8VCBO 60 ICBO VCB=60V 10max AVVCEO 40 IEBO VEB=7V 10max AVVEBO 7 V(BR)CEO

2SC5371(BR3DA5371F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV