2SC5411 Datasheet. Equivalente

 ..1. Size:311K  toshiba
 2sc5411.pdf

2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

 ..2. Size:198K  inchange semiconductor
 2sc5411.pdf

isc Silicon NPN Power Transistor 2SC5411 DESCRIPTION With TO-3PFa packaging High collector-base voltage High power dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CB

 8.1. Size:92K  sanyo
 2sc5415a.pdf

Ordering number ENA1080 2SC5415A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise 2SC5415A Amplifier Applications Features High gain S21e 2=9dB typ (f=1GHz). High cut-off frequency fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VC

 8.2. Size:43K  sanyo
 2sc5417ls.pdf

Ordering number ENN5817A NPN Triple Diffused Planar Silicon Transistor 2SC5417LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5417] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Base 2 Collector 3 Emitter Specifications 2.55 2.55 SANYO T

 8.3. Size:48K  sanyo
 2sc5414a.pdf

Ordering number ENA1081 2SC5414A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise 2SC5414A Amplifier Applications Features High gain S21e 2=9.5dB typ (f=1GHz). High cut-off frequency fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage

 8.4. Size:45K  sanyo
 2sc5416.pdf

Ordering number EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit mm High reliability (Adoption of HVP process). 2079B-TO220FI (LS) Adoption of MBIT process. [2SC5416] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter SANYO TO220FI

 8.5. Size:45K  sanyo
 2sc5417.pdf

Ordering number EN5817 NPN Triple Diffused Planar Silicon Transistor 2SC5417 Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit mm High reliability (Adoption of HVP process). 2079B-TO220FI (LS) Adoption of MBIT process. [2SC5417] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter SANYO TO220FI

 8.6. Size:47K  sanyo
 2sc5414.pdf

Ordering number ENN5910 NPN Epitaxial Planar Silicon Transistor 2SC5414 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain S21e =9.5dB typ (f=1GHz). unit mm High cutoff frequency fT=6.7GHz typ. 2004B [2SC5414] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Base 1 2 3 2 Emitter 3 Collector 1.3 1.3 SANYO NP Specifications

 8.7. Size:47K  sanyo
 2sc5415.pdf

Ordering number ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain S21e =9dB typ (f=1GHz). unit mm High cutoff frequency fT=6.7GHz typ. 2038A [2SC5415] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector 3 Emitter SANYO PCP Specifications (B

 8.8. Size:43K  sanyo
 2sc5416ls.pdf

Ordering number ENN5696A NPN Triple Diffused Planar Silicon Transistor 2SC5416LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5416] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55 2.55 SANYO

 8.9. Size:184K  onsemi
 2sc5415ae 2sc5415af.pdf

Ordering number ENA1080A 2SC5415A RF Transistor http //onsemi.com 12V, 100mA, fT=6.7GHz, NPN Single PCP Features High gain 2 S21e =9dB typ (f=1GHz) High cut-off frequency fT=6.7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-

 8.10. Size:39K  panasonic
 2sc5419.pdf

Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. High transition frequency fT. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symb

 8.11. Size:37K  panasonic
 2sc5418.pdf

Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.

 8.12. Size:44K  panasonic
 2sc5419 e.pdf

Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. High transition frequency fT. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symb

 8.13. Size:37K  panasonic
 2sc5412.pdf

Power Transistors 2SC5412 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.

 8.14. Size:177K  jmnic
 2sc5416.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5416 DESCRIPTION With TO-220F package High breakdown voltage High reliability APPLICATIONS For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

 8.15. Size:176K  jmnic
 2sc5417.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5417 DESCRIPTION With TO-220F package High breakdown voltage High reliability APPLICATIONS For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

 8.16. Size:1027K  kexin
 2sc5415.pdf

SMD Type Transistors NPN Transistors 2SC5415 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

 8.17. Size:183K  inchange semiconductor
 2sc5416.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5416 DESCRIPTION NPN triple diffused planar silicon transistor Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter lighting applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

 8.18. Size:181K  inchange semiconductor
 2sc5417.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5417 DESCRIPTION NPN triple diffused planar silicon transistor Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter lighting applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba