2SC5412 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SC5412Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

Ordering number : ENA1080 2SC5415ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Low-Noise2SC5415AAmplifier ApplicationsFeatures High gain : S21e2=9dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VC

Ordering number:ENN5817ANPN Triple Diffused Planar Silicon Transistor2SC5417LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5417]10.0 4.53.22.80.91.2 1.20.75 0.71 2 3 1:Base2:Collector3:EmitterSpecifications2.55 2.55SANYO:T

Ordering number : ENA1081 2SC5414ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Low-Noise2SC5414AAmplifier ApplicationsFeatures High gain : S21e2=9.5dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage

Ordering number : EN5696NPN Triple Diffused Planar Silicon Transistor2SC5416Inverter Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage.unit: mm High reliability (Adoption of HVP process).2079B-TO220FI (LS) Adoption of MBIT process.[2SC5416]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : EmitterSANYO : TO220FI

Ordering number : EN5817NPN Triple Diffused Planar Silicon Transistor2SC5417Inverter Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage.unit: mm High reliability (Adoption of HVP process).2079B-TO220FI (LS) Adoption of MBIT process.[2SC5417]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : EmitterSANYO : TO220FI

Ordering number:ENN5910NPN Epitaxial Planar Silicon Transistor2SC5414High-FrequencyLow-Noise Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =9.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=6.7GHz typ.2004B[2SC5414]5.04.04.00.450.50.440.451 : Base1 2 32 : Emitter3 : Collector1.3 1.3SANYO : NPSpecifications

Ordering number:ENN5911NPN Epitaxial Planar Silicon Transistor2SC5415High-FrequencyLow-Noise Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =9dB typ (f=1GHz).unit:mm High cutoff frequency : fT=6.7GHz typ.2038A[2SC5415]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSANYO : PCPSpecifications(B

Ordering number:ENN5696ANPN Triple Diffused Planar Silicon Transistor2SC5416LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5416]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55 2.55SANYO:

Ordering number : ENA1080A2SC5415ARF Transistorhttp://onsemi.com12V, 100mA, fT=6.7GHz, NPN Single PCPFeatures High gain 2 : S21e =9dB typ (f=1GHz) High cut-off frequency : fT=6.7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 12 VEmitter-

Transistor2SC5419Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symb

Power Transistors2SC5418Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

Transistor2SC5419Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symb

JMnic Product Specification Silicon NPN Power Transistors 2SC5416 DESCRIPTION With TO-220F package High breakdown voltage High reliability APPLICATIONS For inverter lighting applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product Specification Silicon NPN Power Transistors 2SC5417 DESCRIPTION With TO-220F package High breakdown voltage High reliability APPLICATIONS For inverter lighting applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

SMD Type TransistorsNPN Transistors2SC5415SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

isc Silicon NPN Power Transistor 2SC5411DESCRIPTIONWith TO-3PFa packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCB

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5416DESCRIPTIONNPN triple diffused planar silicon transistorLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter lighting applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5417DESCRIPTIONNPN triple diffused planar silicon transistorLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter lighting applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba