2SC5421 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC5421
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 180 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 600 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 2 MHz
   Capacitancia de salida (Cc): 190 pF
   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: 2-21F2A

Búsqueda de reemplazo de transistor bipolar 2SC5421

2SC5421 Datasheet (PDF)

..1. Size:322K toshiba
2sc5421.pdf

2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat)MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 1500 VCollecto

8.1. Size:316K toshiba
2sc5422.pdf

2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) fMAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITColl

8.2. Size:69K sanyo
2sc5420.pdf

Ordering number:EN5762NPN Triple Diffused Planar Silicon Transistor2SC5420Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2069B Adoption of MBIT process.[2SC5420]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : Base2 : Collector3 : EmitterSANYO : SM

8.3. Size:30K panasonic
2sc5423.pdf

Power Transistors2SC5423Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N126

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