2SC5440 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5440  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 600 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 5

Encapsulados: TOP-3E

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2SC5440 datasheet

 ..1. Size:60K  panasonic
2sc5440.pdf pdf_icon

2SC5440

Power Transistors 2SC5440 2SC5440 2SC5440 2SC5440 2SC5440 Silicon NPN triple diffusion mesa type Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 For horizontal deflection output 5 5 Features High breakdown voltage, and high reliability through the use of a 5 glass passivation layer 5 (4.0) High-speed switching 5 2.0 0.2 Wide area of safe operation (ASO) 1.

 8.1. Size:343K  toshiba
2sc5445.pdf pdf_icon

2SC5440

2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT

 8.2. Size:340K  toshiba
2sc5446.pdf pdf_icon

2SC5440

2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT

 8.3. Size:42K  sanyo
2sc5443.pdf pdf_icon

2SC5440

Ordering number EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5443] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6

Otros transistores... 2SC5423, 2SC5431, 2SC5432, 2SC5433, 2SC5434, 2SC5435, 2SC5436, 2SC5437, 2SD718, 2SC5443, 2SC5444, 2SC5445, 2SC5447, 2SC5448, 2SC5449, 2SC5450, 2SC5451