2SC5464 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5464
Código: MX_MY
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.06 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5000 MHz
Capacitancia de salida (Cc): 0.8 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: 2-2H1A
Búsqueda de reemplazo de transistor bipolar 2SC5464
2SC5464 Datasheet (PDF)
2sc5464.pdf
2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC
2sc5464ft.pdf
2SC5464FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3
2sc5465.pdf
2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 0.7 s (max) t = 0.5 s (max) (I = 0.08 A) f C High collector breakdown voltage: V = 800 V CEOMaximum Ratings (Ta = 25C) Cha
2sc5463.pdf
2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC
2sc5463.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5463DESCRIPTIONLow Noise FigureNF = 1.1 dB TYP. @V = 8 V, I = 5 mA, f = 1 GHzCE CHigh GainS 2 = 12 dB TYP. @V = 8 V, I = 15 mA, f = 1 GHz21e CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF~ UHF band low noi
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: MD3133F
History: MD3133F
Liste
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