2SC5468
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5468
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 8
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 400
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: 2-8H1A
Búsqueda de reemplazo de transistor bipolar 2SC5468
2SC5468
Datasheet (PDF)
8.2. Size:146K toshiba
2sc5465.pdf 
2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 0.7 s (max) t = 0.5 s (max) (I = 0.08 A) f C High collector breakdown voltage: V = 800 V CEOMaximum Ratings (Ta = 25C) Cha
8.3. Size:124K toshiba
2sc5464.pdf
2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC
8.4. Size:125K toshiba
2sc5464ft.pdf
2SC5464FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3
8.5. Size:215K toshiba
2sc5463.pdf
2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC
8.7. Size:174K inchange semiconductor
2sc5463.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5463DESCRIPTIONLow Noise FigureNF = 1.1 dB TYP. @V = 8 V, I = 5 mA, f = 1 GHzCE CHigh GainS 2 = 12 dB TYP. @V = 8 V, I = 15 mA, f = 1 GHz21e CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF~ UHF band low noi
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
