2SC5470 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5470  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 3.5

Encapsulados: TO-3PFM

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2SC5470 datasheet

 ..1. Size:42K  hitachi
2sc5470.pdf pdf_icon

2SC5470

2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 (Z) 1st. Edition Oct. 1, 1998 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec(typ.) at fH=64kHz Outline TO 3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector

 8.1. Size:40K  sanyo
2sc5476.pdf pdf_icon

2SC5470

Ordering number EN6069 NPN Epitaxial Planar Silicon Darlington Transistor 2SC5476 85V/3A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC5476] Features 4.5 10.0 2.8 High DC current gain. 3.2 Large current capacity and wide ASO. Contains a Zener d

 8.2. Size:38K  panasonic
2sc5472 e.pdf pdf_icon

2SC5470

Transistor 2SC5472 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 High gain of 8.2dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. 2 S-Mini type package, allowing downsizing of the equipment and a

 8.3. Size:38K  panasonic
2sc5473 e.pdf pdf_icon

2SC5470

Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic

Otros transistores... 2SC5452, 2SC5453, 2SC5454, 2SC5455, 2SC5457, 2SC5463, 2SC5464, 2SC5468, BD135, 2SC5472, 2SC5473, 2SC5474, 2SC5476, 2SC5477, 2SC5478, 2SC5480, 2SC5482