2SC5476 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5476 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 85 V
Tensión colector-emisor (Vce): 85 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 0.9 pF
Ganancia de corriente contínua (hFE): 2000
Encapsulados: TO-220ML
📄📄 Copiar
Búsqueda de reemplazo de 2SC5476
- Selecciónⓘ de transistores por parámetros
2SC5476 datasheet
2sc5476.pdf
Ordering number EN6069 NPN Epitaxial Planar Silicon Darlington Transistor 2SC5476 85V/3A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC5476] Features 4.5 10.0 2.8 High DC current gain. 3.2 Large current capacity and wide ASO. Contains a Zener d
2sc5472 e.pdf
Transistor 2SC5472 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 High gain of 8.2dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. 2 S-Mini type package, allowing downsizing of the equipment and a
2sc5473 e.pdf
Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic
2sc5473.pdf
Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic
Otros transistores... 2SC5457, 2SC5463, 2SC5464, 2SC5468, 2SC5470, 2SC5472, 2SC5473, 2SC5474, TIP127, 2SC5477, 2SC5478, 2SC5480, 2SC5482, 2SC5484, 2SC5485, 2SC5488, 2SC5489
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sd388 | 2sc1400 | 2sd331 | 2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent











