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2SC5485 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC5485
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: FRAME

 Búsqueda de reemplazo de transistor bipolar 2SC5485

 

2SC5485 Datasheet (PDF)

 ..1. Size:89K  isahaya
2sc5485.pdf

2SC5485
2SC5485

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 8.1. Size:34K  sanyo
2sc5488.pdf

2SC5485
2SC5485

Ordering number:ENN6288NPN Epitaxial Planar Silicon Transistor2SC5488VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2159 High cutoff frequency : fT=7GHz typ.[2SC5488] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.10

 8.2. Size:57K  sanyo
2sc5488a.pdf

2SC5485
2SC5485

Ordering number : ENA1089 2SC5488ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5488AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen fr

 8.3. Size:31K  sanyo
2sc5489.pdf

2SC5485
2SC5485

Ordering number:ENN6339NPN Epitaxial Planar Silicon Transistor2SC5489VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2159 High cutoff frequency : fT=9.0GHz typ.[2SC5489] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.

 8.4. Size:464K  onsemi
2sc5488a.pdf

2SC5485
2SC5485

Ordering number : ENA1089A2SC5488ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single SSFPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25

 8.5. Size:33K  hitachi
2sc5480.pdf

2SC5485
2SC5485

2SC5480Silicon NPN Triple DiffusedHorizntal Deflection OutputADE-208-632 (Z)1st. EditionOct. 1, 1998Features High breakdown voltageVCES = 1500 V Isolated packageTO3PFM Built-in damper diodeOutlineTO3PFMC21B1.Base32.CollectorE13.Emitter232SC5480Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to emit

 8.6. Size:332K  no
2sc5487.pdf

2SC5485
2SC5485

Transistors22-1 Power Transistors ............................................................................................. 142-1-1 Transistors for Audio Amplifiers ................................................................ 14 Complementary Transistors for Output ......................................................... 14 Complementary Transistors for Output built-in

 8.7. Size:105K  isahaya
2sc5482.pdf

2SC5485
2SC5485

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

 8.8. Size:100K  isahaya
2sc5484.pdf

2SC5485
2SC5485

http://www.idc-com.co.jp 854-0065 6-41

 8.9. Size:178K  inchange semiconductor
2sc5480.pdf

2SC5485
2SC5485

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5480DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stageapplications.ABSOLUTE MAXIMUM RATINGS(T

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2S302A | 2SA1418T

 

 
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History: 2S302A | 2SA1418T

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