2SC5513 Datasheet. Equivalente

 ..1. Size:35K  panasonic
 2sc5513.pdf

Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.

 8.1. Size:51K  rohm
 2sc5511.pdf

2SC5511 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) 2SC5511 Features External dimensions (Units mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = 160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 4) Wide SOA (safe operating area). 5) Complements the 2SA2005. 1.2 1.3

 8.2. Size:35K  panasonic
 2sc5514.pdf

Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.

 8.3. Size:35K  panasonic
 2sc5515.pdf

Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.

 8.4. Size:47K  panasonic
 2sc5519.pdf

Power Transistors 2SC5519 2SC5519 2SC5519 2SC5519 2SC5519 Silicon NPN triple diffusion mesa type Unit mm 15.5 0.5 3.0 0.3 For horizontal deflection output 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a 5 glass passivation layer 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.

 8.5. Size:35K  panasonic
 2sc5516.pdf

Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.

 8.6. Size:35K  panasonic
 2sc5518.pdf

Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.

 8.7. Size:35K  panasonic
 2sc5517.pdf

Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.

 8.8. Size:187K  inchange semiconductor
 2sc5516.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5516 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.9. Size:179K  inchange semiconductor
 2sc5517.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5517 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Wide Area of Safe Operation Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications AB