2SC5540 Datasheet. Equivalente

 ..1. Size:30K  sanyo
 2sc5540.pdf

Ordering number ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions High cutoff frequency fT=10GHz typ. unit mm 2 High gain S21e =13dB typ (f=1GHz). 2159 Low noise NF=1.3dB typ (f=1GHz). [2SC5540] Small Cob Cob=0.4pF typ. Ultrasmall, slim flat-lead package. 1.

 8.1. Size:230K  toshiba
 2sc5548.pdf

2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage V = 370 V CEO High DC current gain h = 60 (min) (I = 0.2 A) FE C Maximum Ra

 8.2. Size:205K  toshiba
 2sc5549.pdf

 8.3. Size:230K  toshiba
 2sc5548a.pdf

2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage V = 400 V CEO High DC current gain h = 40 (min) (I = 0.2 A) FE C Maximum

 8.4. Size:44K  sanyo
 2sc5541.pdf

Ordering number ENN6337 NPN Epitaxial Planar Silicon Transistor 2SC5541 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=2GHz). unit mm 2 High gain S21e =10dB typ (f=2GHz). 2159 High cutoff frequency fT=13GHz typ. [2SC5541] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.1 0.25

 8.5. Size:37K  panasonic
 2sc5546.pdf

Power Transistors 2SC5546 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.1 0.1 0.7 0.1 Absolute Maximum

 8.6. Size:45K  hitachi
 2sc5545.pdf

2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 (Z) 1st. Edition Jan. 1999 Features Excellent inter modulation characteristic High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter Note Marking is ZS- . 2SC5545 Absolute Maximum Ratings (Ta = 25

 8.7. Size:46K  hitachi
 2sc5544.pdf

2SC5544 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-691 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YZ- . 2SC5544 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas

 8.8. Size:46K  hitachi
 2sc5543.pdf

2SC5543 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-690 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YA- . 2SC5543 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas

 8.9. Size:1157K  kexin
 2sc5548a.pdf

SMD Type Transistors NPN Transistors 2SC5548A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High speed switching High collector breakdown voltage High DC current gain 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Sym

 8.10. Size:201K  inchange semiconductor
 2sc5548.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5548 DESCRIPTION Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB1204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current swi

 8.11. Size:190K  inchange semiconductor
 2sc5548a.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5548A DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB1204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and