2N627 Todos los transistores

 

2N627 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N627

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 20 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.1 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO3

 Búsqueda de reemplazo de 2N627

- Selecciónⓘ de transistores por parámetros

 

2N627 datasheet

 0.1. Size:169K  motorola
2n6274-75 2n6277 2n6274 2n6275 2n6277.pdf pdf_icon

2N627

Order this document MOTOROLA by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 High-Power NPN Silicon 2N6275 Transistors 2N6277 * . . . designed for use in industrial military power amplifer and switching circuit *Motorola Preferred Device applications. High Collector Emitter Sustaining 50 AMPERE VCEO(sus) = 100 Vdc (Min) 2N6274 POWER TRANSISTORS VCEO(sus) = 120 Vdc

 0.2. Size:12K  semelab
2n6270.pdf pdf_icon

2N627

2N6270 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.3. Size:11K  semelab
2n6271.pdf pdf_icon

2N627

2N6271 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.4. Size:64K  microsemi
2n6274 2n6277.pdf pdf_icon

2N627

TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 Devices Qualified Level JAN 2N6274 2N6277 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6274 2N6277 Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 120 180 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Base Current I 20 Adc B Collector Current 50 Adc IC 250 W T

Otros transistores... 2N6262 , 2N6263 , 2N6264 , 2N6265 , 2N6266 , 2N6267 , 2N6268 , 2N6269 , A733 , 2N6270 , 2N6271 , 2N6272 , 2N6273 , 2N6274 , 2N6274A , 2N6275 , 2N6275A .

History: 2N624 | 2N622

 

 

 


History: 2N624 | 2N622

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

y2 transistor | 40n06 | bc108b | oc84 | c6090 | ksa1015yta | 2n4240 | 2n5210 transistor

 

 

↑ Back to Top
.