2SC5552 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SC5552Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer55 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.10.10.70.1 Absolute Maximum

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5552DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation VoltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

Ordering number:ENN6328NPN Epitaxial Planar Silicon Transistor2SC5551High-Frequency Medium-OutputAmplifier ApplicationsFeatures Package Dimensions High fT : (fT=3.5GHz typ).unit:mm Large current : (IC=300mA).2038A Large allowable collector dissipation (1.3W max).[2SC5551]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSA

Ordering number : ENA1118 2SC5551ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Medium-Output2SC5551AAmplifier ApplicationsFeatures High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings Un

Ordering number : ENA1118A2SC5551ARF Transistorhttp://onsemi.com30V, 300mA, fT=3.5GHz, NPN Single PCPFeatures High fT : (fT=3.5GHz typ) Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 40 VCollector-to-Emitter Volta

Power Transistors2SC5553Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer55 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.10.10.70.1 Absolute Maximum

Transistors2SC5556Silicon NPN epitaxial planar typeFor UHF band low-noise amplificationUnit: mm0.40+0.100.050.16+0.100.06 Features3 Low noise figure NF High transition frequency fT Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazinepacking (0.95) (0.95)1.90.12.90+0.20

2SC5554Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-692 (Z)1st. EditionOct. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is YH-.2SC5554Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base

2SC5555Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-693 (Z)1st. EditionNov. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is ZD-.2SC5555Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to bas