2SC5580 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistors2SC5580Silicon NPN epitaxial planer typeUnit: mmFor high-frequency oscillation / switching0.3+0.1 0.15+0.100.050.03 Features High transition frequency fT S-mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazine(0.65) (0.65)packing.1.30.12.00.210 Absolute Maximu

2SC5588 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5588 Unit: mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTER

2SC5589 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5589 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit: mm HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCo

2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT

2SC5663 / 2SC5585 DatasheetLow frequency transistor (12V, 500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO12VIC500mA 2SC5663 2SC5585(VMT3) (EMT3)lFeatures l 1)High current2)Low VCE(sat).VCE(sat)250mV at IC=200mA/IB=10mAlApplicationlLOW FREQUENCY

2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit : mm) Applications For switching 2SC5585For muting (1)(2)(3)0.8 Features 1.61) High current. 2) Low VCE(sat). 0.1Min.(1) Emitter

Power Transistors2SC5583Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output20.00.5 5.00.3(3.0) 3.30.2 Features High breakdown voltage, and high reliability through the use of aglass passivation layer(1.5) High-speed switching Wide area of safe operation (ASO) (1.5)2.00.32.70.33.00.31.00.2 Absolute Maximum Ra

Power Transistors2SC5584Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output20.00.5 5.00.3(3.0) 3.30.2 Features High breakdown voltage, and high reliability through the use of aglass passivation layer(1.5) High-speed switching Wide area of safe operation (ASO) (1.5)2.00.32.70.33.00.31.00.2 Absolute Maximum Ra

2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Current. Low VCE(sat). VCE(sat)0.25V (@IC=200mA / IB=10mA) A Complement of 2SC4738. M33Top View C BApplication 11 2 General Purpose Amplification. L 2KEMARKING DH

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate TransistorsSOT-523 32SC5585 TRANSISTOR (NPN) FEATURES High current. Low VCE(sat). VCE(sat)250mV at IC = 200mA / IB = 10mA11. BASE 22. EMITTERMARKING: BX 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector- Base Voltage 15 V VCEO C

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2SC5585SOT-523 Transistor(NPN)1. BASE SOT-5232. EMITTER 3. COLLECTOR Features High current. Low VCE(sat). VCE(sat)250mV at IC = 200mA / IB = 10mA MARKING: BX Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-B

2SC5585NPN TRANSISTOR3P b Lead(Pb)-Free12FEATURES:SOT-523(SC-75)* High current.* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mAMAXIMUM RATINGS (TA=25Cunless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO 15 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 6 VCollector Current Continuous IC 500 mACollector Dissipa

isc Silicon NPN Power Transistor 2SC5586DESCRIPTIONHigh Collector-Base Voltage-: V = 900V(Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBO

isc Product Specificationisc Silicon NPN Power Transistor 2SC5584DESCRIPTIONSilicon NPN triple diffusion mesa typeHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)