2SC5592 Todos los transistores

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2SC5592 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5592

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.6 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 180 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hfe): 280

Empaquetado / Estuche: SC-59

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2SC5592 Datasheet (PDF)

1.1. 2sc5592.pdf Size:50K _panasonic

2SC5592
2SC5592

Transistors 2SC5592 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter 0.40+0.10 0.05 0.16+0.10 0.06 For various driver circuits 3 Features 1 2 Low collector to emitter saturation voltage VCE(sat) , large current (0.95) (0.95) capacitance 1.90.1 High-speed switching 2.90+0.20 0.05 Mini type 3-pin package, allowing downsizing and thinning of the 10 equi

4.1. 2sc5590.pdf Size:297K _toshiba

2SC5592
2SC5592

2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit: mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERIST

4.2. 2sc5593.pdf Size:63K _renesas

2SC5592
2SC5592

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.3. 2sc5599.pdf Size:101K _nec

2SC5592
2SC5592

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin ultra super minimold package(t = 0.75 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5599 50 pcs (Non reel) 8 mm wide embossed taping 2SC5

4.4. 2sc5597.pdf Size:54K _panasonic

2SC5592
2SC5592

Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 20.00.5 5.00.3 (3.0) ? 3.30.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.00.3 2.70.3 3.00.3 1.00.2 Absolute Maximum Ratings TC = 25C

4.5. 2sc5591.pdf Size:49K _panasonic

2SC5592

Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle 5? High-speed switching: tf < 0.2 s 5? (4.0) Low Collector to emitter saturation voltage: VCE(sat) < 3 V 5? 2.00.2 Wide area of safe o

4.6. 2sc5594.pdf Size:53K _hitachi

2SC5592
2SC5592

2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-798 (Z) 1st. Edition Nov. 2000 Features High gain bandwidth product fT = 24 GHz typ. High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is XP-. 2SC5594 Absolute Maximum Ratings (T

Otros transistores... 2SC5580 , 2SC5583 , 2SC5584 , 2SC5587 , 2SC5588 , 2SC5589 , 2SC5590 , 2SC5591 , S8050 , 2SC5593 , 2SC5594 , 2SC5597 , 2SC5606 , 2SC5607 , 2SC5609 , 2SC5612 , 2SC5619 .

 


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