2SC5594 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC5594Silicon NPN EpitaxialHigh Frequency Low Noise AmplifierADE-208-798 (Z)1st. EditionNov. 2000Features High gain bandwidth productfT = 24 GHz typ. High power gain and low noise figure ;PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHzOutlineCMPAK-42314 1. Emitter2. Collector3. Emitter4. BaseNote: Marking is XP-.2SC5594Absolute Maximum

2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit: mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACT

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

DATA SHEETNPN SILICON RF TRANSISTOR2SC5599NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin ultra super minimold package(t = 0.75 mm)ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5599 50 pcs (Non reel) 8 mm wide embossed

Horizontal Deflection Transistor Series for TV OverviewBased on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performanceand compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe-operation, despite an absolutely minimal chip area which allows very compact package configuration. T

Power Transistors2SC5591Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage: 1 700 V; supporting a large screen CRTand wider visible angle5 High-speed switching: tf

Transistors2SC5592Silicon NPN epitaxial planer typeUnit: mmFor DC-DC converter0.40+0.100.050.16+0.100.06For various driver circuits3 Features1 2 Low collector to emitter saturation voltage VCE(sat) , large current(0.95) (0.95)capacitance1.90.1 High-speed switching2.90+0.200.05 Mini type 3-pin package, allowing downsizing and thinning o

Power Transistors2SC5597Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output20.00.5 5.00.3(3.0) 3.30.2 Features High breakdown voltage, and high reliability through the use of aglass passivation layer(1.5) High-speed switching Wide area of safe operation (ASO) (1.5)2.00.32.70.33.00.31.00.2 Absolute Maximum Ra