2SC5606
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5606
Código: UA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.115
W
Tensión colector-base (Vcb): 15
V
Tensión colector-emisor (Vce): 3.3
V
Tensión emisor-base (Veb): 1.5
V
Corriente del colector DC máxima (Ic): 0.035
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 21000
MHz
Capacitancia de salida (Cc): 0.21
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: ULTRA-SUPER-MINIMOLD-3PIN
Búsqueda de reemplazo de transistor bipolar 2SC5606
2SC5606
Datasheet (PDF)
..1. Size:67K nec
2sc5606.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Suitable for high-frequency oscillation fT = 25 GHz technology adopted 3-pin ultra super minimoldORDERING INFORMATIONPart Number Quantity Supplying Form2SC5606 50 pcs (Non reel) 8 mm wide embossed taping2SC5606-T1 3
8.1. Size:30K sanyo
2sc5607.pdf
Ordering number : ENN6403A2SC5607NPN Epitaxial Planar Silicon Transistor2SC5607DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2033AFeatures[2SC5607] Adoption of MBIT processes. 2.24.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
8.2. Size:105K nec
2sc5602.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5602NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm)ORDE
8.3. Size:98K nec
2sc5600.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5600NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm)ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5600 50 pcs (Non reel) 8 mm wide embossed taping2
8.4. Size:96K nec
2sc5603.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5603NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATION
8.5. Size:45K panasonic
2sc5609.pdf
Transistors2SC5609Silicon PNP epitaxial planer typeUnit: mmFor general amplification0.33+0.05 0.10+0.050.02 0.02Complementary to 2SA20213 Features High foward current transfer ratio hFE 0.23+0.05 1 20.02(0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the0.800.05equipment and automatic insertion through the tape packing1.2
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.