2SC5607 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5607  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.55 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 380 MHz

Capacitancia de salida (Cc): 23 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SPA

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2SC5607 datasheet

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 2sc5607.pdf pdf_icon

2SC5607

Ordering number ENN6403A 2SC5607 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2033A Features [2SC5607] Adoption of MBIT processes. 2.2 4.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

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 2sc5602.pdf pdf_icon

2SC5607

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier S21e 2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm) ORDE

 8.2. Size:98K  nec
 2sc5600.pdf pdf_icon

2SC5607

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5600 50 pcs (Non reel) 8 mm wide embossed taping 2

 8.3. Size:96K  nec
 2sc5603.pdf pdf_icon

2SC5607

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier S21e 2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION

MOSTRAR MÁS

Otros transistores... 2SC5589, 2SC5590, 2SC5591, 2SC5592, 2SC5593, 2SC5594, 2SC5597, 2SC5606, TIP41, 2SC5609, 2SC5612, 2SC5619, 2SC5620, 2SC5622, 2SC5623, 2SC5624, 2SC5626