2SC5680 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5680
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 4
Paquete / Cubierta: TO-3PMLH
Búsqueda de reemplazo de 2SC5680
2SC5680 Datasheet (PDF)
2sc5680.pdf

Ordering number : ENN6652A2SC5680NPN Triple Diffused Planar Silicon Transistor2SC5680Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5680] Adoption of MBIT process.5.63.416.03.12.82.0 2
2sc5683.pdf

Ordering number : ENN6653A2SC5683NPN Triple Diffused Planar Silicon Transistor2SC5683Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5683] Adoption of MBIT process.5.63.416.03.12.82.0 2
2sc5689.pdf

Ordering number : ENN6654A2SC5689NPN Triple Diffused Planar Silicon Transistor2SC5689Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5689] Adoption of MBIT process.5.63.4 On-chip damper di
Otros transistores... 2SC5629 , 2SC5631 , 2SC5632 , 2SC5645 , 2SC5646 , 2SC5647 , 2SC5654 , 2SC5665 , 2SC2073 , 2SC5681 , 2SC5682 , 2SC5683 , 2SC5684 , 2SC5686 , 2SC5689 , 2SC5690 , 2SC5695 .
History: KT630E | MMBT3904-MS
History: KT630E | MMBT3904-MS



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