2SC5683
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5683
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 25
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 4
Paquete / Cubierta:
TO-3PMLH
Búsqueda de reemplazo de transistor bipolar 2SC5683
2SC5683
Datasheet (PDF)
..1. Size:28K sanyo
2sc5683.pdf 
Ordering number : ENN6653A2SC5683NPN Triple Diffused Planar Silicon Transistor2SC5683Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5683] Adoption of MBIT process.5.63.416.03.12.82.0 2
8.2. Size:29K sanyo
2sc5689.pdf
Ordering number : ENN6654A2SC5689NPN Triple Diffused Planar Silicon Transistor2SC5689Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5689] Adoption of MBIT process.5.63.4 On-chip damper di
8.3. Size:28K sanyo
2sc5682.pdf
Ordering number : ENN6608A2SC5682NPN Triple Diffused Planar Silicon Transistor2SC5682Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5682] Adoption of MBIT process.5.63.416.03.12.82.0 2.1
8.4. Size:28K sanyo
2sc5680.pdf
Ordering number : ENN6652A2SC5680NPN Triple Diffused Planar Silicon Transistor2SC5680Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5680] Adoption of MBIT process.5.63.416.03.12.82.0 2
8.5. Size:28K sanyo
2sc5681.pdf
Ordering number : ENN6607A2SC5681NPN Triple Diffused Planar Silicon Transistor2SC5681Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5681] Adoption of MBIT process.5.63.416.03.12.82.0 2.1
8.6. Size:75K panasonic
2sc5686.pdf
Power Transistors2SC5686Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 2 000 V High-speed switching: tf
8.7. Size:214K inchange semiconductor
2sc5689.pdf
isc Silicon NPN Power Transistor 2SC5689DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
