2SC5758 Todos los transistores

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 25 ns (typ.) f Maximum Ratings (Ta = = 25 C) = = Char

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for 460 MHz to 2.4 GHz medium output power amplification PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm High collector efficiency C = 60% UHS0-HV technology (fT = 25 GHz

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

2SC5757 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1396D (Z) Rev.4 Jul. 2001 Features Super compact package MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is WE . 2SC5757 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage

2SC5759 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1389 (Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 10.6 GHz typ. High power gain and low noise figure ; PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz Very low distortion Output IP3 (800 MHz) = 36 dBm typ. Outline CMPAK-4 2 3 1 4 1. Collector 2. Collector 3.