2SC5764 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5764
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 17 MHz
Capacitancia de salida (Cc): 80 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO-220ML
Búsqueda de reemplazo de transistor bipolar 2SC5764
2SC5764 Datasheet (PDF)
2sc5764.pdf
Ordering number : ENN6971A2SC5764NPN Triple Diffused Planar Silicon Transistor2SC5764Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2041A High-speed switching.[2SC5764] Wide ASO.4.510.02.8 Adoption of MBIT process.3.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector
2sc5764.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5764DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applications.ABSOLUTE MAXIMUM RA
2sc5765.pdf
2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C BMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating UnitCollector-Base voltage VCBO 15 VCollector-Emitter voltage VCEO 10 VEmitter-Ba
2sc5763.pdf
Ordering number : ENN6989A2SC5763NPN Triple Diffused Planar Silicon Transistor2SC5763Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2010C High-speed switching.[2SC5763] Wide ASO.10.24.5 Adoption of MBIT process. 3.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSANY
2sc5761.pdf
DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5761NPN SiGe RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATIONFLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)FEATURES Ideal for low noise high-gain amplificationNF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT
2sc5765.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3
2sc5763.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5763DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applications.ABSOLUTE MAXIMUM RA
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
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