2SC5779 Datasheet. Equivalente

 ..1. Size:78K  panasonic
 2sc5779.pdf

Power Transistors 2SC5779 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs 3.2 0.1 Industrial equipments such as DC-DC converters Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 8.1. Size:30K  sanyo
 2sc5778.pdf

Ordering number ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). Adoption of MBIT process. [2SC5778] On-chip damper diode. 5.6

 8.2. Size:29K  sanyo
 2sc5777.pdf

Ordering number ENN6991 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2174A High reliability (Adoption of HVP process). [2SC5777] Adoption of MBIT process. 5.6 3.4 On-chip damper d

 8.3. Size:29K  sanyo
 2sa2063 2sc5775.pdf

Ordering number ENN6988 2SA2063 / 2SC5775 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 160V / 12A, AF90W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2063 / 2SC5775] 15.6 3.2 4.8 14.0 2

 8.4. Size:29K  sanyo
 2sa2062 2sc5774.pdf

Ordering number ENN6987 2SA2062 / 2SC5774 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 140V / 10A, AF 70W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2062 / 2SC5774] 15.6 3.2 4.8 14.0

 8.5. Size:29K  sanyo
 2sc5776.pdf

Ordering number ENN6990 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2174A High reliability (Adoption of HVP process). [2SC5776] Adoption of MBIT process. 5.6 3.4 16.0 On-chip da

 8.6. Size:91K  hitachi
 2sc5773.pdf

2SC5773 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1391(Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 10.8 GHz typ. High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz Outline MPAK 3 1 1. Emitter 2 2. Base 3. Collector Note Marking is JR- . This data sheet contains tentativ

 8.7. Size:90K  hitachi
 2sc5772.pdf

2SC5772 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1390 (Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 9 GHz typ. High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz Outline MPAK 3 1 1. Emitter 2 2. Base 3. Collector Note Marking is FR- . This data sheet contains tentative sp

 8.8. Size:1337K  kexin
 2sc5773.pdf

SMD Type Transistors NPN Transistors 2SC5773 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=6V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

 8.9. Size:1339K  kexin
 2sc5772.pdf

SMD Type Transistors NPN Transistors 2SC5772 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=75mA 1 2 Collector Emitter Voltage VCEO=9V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

 8.10. Size:170K  inchange semiconductor
 2sc5772.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5772 DESCRIPTION High Gain Bandwidth Product f = 9 GHz TYP. T High power gain and low noise figure ; PG = 13 dB TYP., NF = 1.1 dB typ. @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF wide band amplifier.