2SC5846 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5846
Código: 7K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 2.2 pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: SSSMINI3-F1
Búsqueda de reemplazo de 2SC5846
2SC5846 Datasheet (PDF)
2sc5846.pdf

TransistorsSSSMini3-F1 Package2SC5846Silicon NPN epitaxial planar typeFor general amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High forward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of theequipment and automatic insertion through the tape packing0.23+0.05 1 20.02(0.40)(0.40)0.800.051.20
2sc5843.pdf

DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5843NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT
2sc5845.pdf

Transistors2SC5845Silicon NPN epitaxial planar typeFor general amplificationUnit: mm0.40+0.100.050.16+0.100.06 Features3 High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au-tomatic insertion through the tape packing and the magazine pack-1 2ing(0.95) (0.95)1.90.12.90+0.200.05 Absolu
2sc5840.pdf

Power Transistors2SC5840Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: HSE116 | 40881 | SK3137 | SD1489 | BC847DW-C | BUX41N | 2SB1118U
History: HSE116 | 40881 | SK3137 | SD1489 | BC847DW-C | BUX41N | 2SB1118U



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