2SC5890 Datasheet. Equivalente

 ..1. Size:169K  renesas
 2sc5890.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 ..2. Size:170K  inchange semiconductor
 2sc5890.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5890 DESCRIPTION High Gain Bandwidth Product f = 7.8 GHz TYP. T High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF wide band amplifier.

 8.1. Size:29K  sanyo
 2sc5899.pdf

Ordering number ENN7538 2SC5899 NPN Triple Diffused Planar Silicon Transistor 2SC5899 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1700V). 2174A High reliability(Adoption of HVP process). [2SC5899] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.

 8.2. Size:129K  renesas
 2sc5894.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.3. Size:54K  panasonic
 2sc5895.pdf

Power Transistors 2SC5895 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 8.4. Size:61K  panasonic
 2sc5896.pdf

Power Transistors 2SC5896 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 8.5. Size:145K  jmnic
 2sc5895.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5895 DESCRIPTION With TO-220F package High speed switching Low collector saturation voltage APPLICATIONS Power supply for audio and visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) an

 8.6. Size:180K  inchange semiconductor
 2sc5895.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5895 DESCRIPTION High Breakdown Voltage Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply for audio & visual equipments such as TVS and VCRS Industrial equipments such as DC-DC converters ABSOLUTE MAXIMUM